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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 2, Pages 159–163
DOI: https://doi.org/10.21883/FTP.2021.02.50503.9502 (Mi phts5081) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Anisotropy of negative magnetoresistance in GaMnAs epitaxial layers

A. S. Gazizulinaa, A. A. Nasirova, A. A. Nebesniya, P. B. Parchinskiya, D. Kimb

a National University of Uzbekistan, Tashkent, Uzbekistan
b Chungnam National University, 305-764, Taejon, Korea
Full-text PDF (495 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2021.02.50503.9502
Abstract: The temperature dependence of the anisotropy of the magnetotransport properties of GaMnAs epitaxial layers featuring ferromagnetic order is investigated. The anisotropy of negative magnetoresistance that is unrelated to the presence of uniaxial anisotropy and the orientation of the hard magnetization axis is observed. This anisotropy may result from the occurrence of spatially oriented structures in GaMnAs that emerge in the bulk of the epitaxial layer during growth.
Keywords: anisotropy, negative magnetoresistance, epitaxial layers, ferromagnetic ordering.
Received: 10.08.2020
Revised: 22.10.2020
Accepted: 22.10.2020
English version:
Semiconductors, 2021, Volume 55, Issue 2, Pages 214–218
DOI: https://doi.org/10.1134/S1063782621020123
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Gazizulina, A. A. Nasirov, A. A. Nebesniy, P. B. Parchinskiy, D. Kim, “Anisotropy of negative magnetoresistance in GaMnAs epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 159–163; Semiconductors, 55:2 (2021), 214–218
Citation in format AMSBIB
\Bibitem{GazNasNeb21}
\by A.~S.~Gazizulina, A.~A.~Nasirov, A.~A.~Nebesniy, P.~B.~Parchinskiy, D.~Kim
\paper Anisotropy of negative magnetoresistance in GaMnAs epitaxial layers
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 2
\pages 159--163
\mathnet{http://mi.mathnet.ru/phts5081}
\crossref{https://doi.org/10.21883/FTP.2021.02.50503.9502}
\elib{https://elibrary.ru/item.asp?id=44859601}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 2
\pages 214--218
\crossref{https://doi.org/10.1134/S1063782621020123}
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  • https://www.mathnet.ru/eng/phts/v55/i2/p159
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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