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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor structures, low-dimensional systems, quantum phenomena
The effect of the ionizing radiation intensity on the response of MOS structures
O. V. Aleksandrov Saint Petersburg Electrotechnical University "LETI", St. Petersburg, Russia
Abstract:
The effect of the intensity of ionizing radiation on the volume charge and surface-state density of metal–oxide–semiconductor (MOS) structures with thin gate silicon dioxide is modeled. It is shown that the dependences of the surface-state density and volume charge on the total time of ionizing radiation and subsequent annealing at different ionizing-radiation intensities lie on the corresponding common curves $N_ {it}(t)$ and $Q_{ot}(t)$. The $N_ {it}(t)$ common curve is determined by the dispersive nature of the transport of hydrogen ions Н$^+$. The observed deviations from this $N_ {it}(t)$ common curve immediately after the end of ionizing irradiation are due to the transient process of the redistribution of Н$^+$ ions. The $Q_ {ot}(t)$ common curve is determined by relaxation of the volume charge from a system of levels with energies of 0.3 to 1.0 eV by the mechanism of thermal emission. It is shown that the enhanced low-dose-rate sensitivity (ELDRS) for the MOS structures with a thick base oxide at low intensities is determined by the dispersive character of the transport of hydrogen ions Н$^+$.
Keywords:
ionizing radiation, MOS structure, surface states, volume charge, dispersive transport, modeling.
Received: 08.10.2020 Revised: 10.10.2020 Accepted: 19.10.2020
Citation:
O. V. Aleksandrov, “The effect of the ionizing radiation intensity on the response of MOS structures”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 152–158; Semiconductors, 55:2 (2021), 207–213
Linking options:
https://www.mathnet.ru/eng/phts5080 https://www.mathnet.ru/eng/phts/v55/i2/p152
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