|
This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Huge magnetoresistance in metal–organic semiconductor–metal structure
A. A. Lachinov, D. D. Karamov, A. N. Lachinov Institute of Molecule and Crystal Physics, Ufa Federal Research Centre, Russian Academy of Sciences, Ufa, Russia
Abstract:
The article represents results of huge magnetoresistance effect investigation in the structure of magnetic
metal–organic semiconductor–nonmagnetic metal with magnitude of $\sim$ 2600%. There are observed influence of magnetic field on concentration and mobility of charge carriers and on magnitude of ferromagnetic/semiconductor potential barrier. Theoretical interpretation is considered with previously discussed model. The model describes influence of hyperfine fields on spin selective hopping rate between the sites in the polymer
Keywords:
spintronics, huge magnetoresistance, polymers, thin films.
Received: 15.04.2020 Revised: 07.10.2020 Accepted: 15.10.2020
Citation:
A. A. Lachinov, D. D. Karamov, A. N. Lachinov, “Huge magnetoresistance in metal–organic semiconductor–metal structure”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 147–151; Semiconductors, 55:2 (2021), 202–206
Linking options:
https://www.mathnet.ru/eng/phts5079 https://www.mathnet.ru/eng/phts/v55/i2/p147
|
Statistics & downloads: |
Abstract page: | 54 | Full-text PDF : | 20 |
|