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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 3, Pages 251–255
DOI: https://doi.org/10.21883/FTP.2021.03.50603.9554 (Mi phts5066) 		 
Micro- and nanocrystalline, porous, composite semiconductors

On the Raman scattering, infrared absorption, and luminescence spectroscopy of aluminum nitride doped with beryllium

I. D. Breeva, V. V. Yakovlevaa, O. S. Kudryavtsevb, P. G. Baranova, E. N. Mokhova, A. N. Anisimova

a Ioffe Institute, St. Petersburg, Russia
b Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia
Full-text PDF (714 kB)
DOI: https://doi.org/10.21883/FTP.2021.03.50603.9554
Abstract: The high-temperature (T = 1880$^\circ$C) Be-ions diffusion and electron irradiation influence on the AlN monocrystals optical properties were investigated. We demonstrated that Be diffusion into AlN leads to spectral properties change of the Raman scattering and infrared absorption. The analysis of the Raman and infrared absorption spectra of the AlN crystals, containing Be impurity, proves that Be impurity is a getter for intrinsic impurities, which are responsible for AlN crystals yellow color manifestation and spectral lines broadening of lines in the spectra.
Keywords: aluminum nitride, doping, beryllium, getter, intrinsic defects, Raman scattering, photoluminescence, infrared absorption.
Funding agency Grant number
Russian Foundation for Basic Research 19-02-00649
The study was supported by the Russian Foundation for Basic Research, project no. 19-02-00649.
Received: 12.11.2020
Revised: 23.11.2020
Accepted: 23.11.2020
English version:
Semiconductors, 2021, Volume 55, Issue 3, Pages 328–332
DOI: https://doi.org/10.1134/S1063782621030040
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. D. Breev, V. V. Yakovleva, O. S. Kudryavtsev, P. G. Baranov, E. N. Mokhov, A. N. Anisimov, “On the Raman scattering, infrared absorption, and luminescence spectroscopy of aluminum nitride doped with beryllium”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 251–255; Semiconductors, 55:3 (2021), 328–332
Citation in format AMSBIB
\Bibitem{BreYakKud21}
\by I.~D.~Breev, V.~V.~Yakovleva, O.~S.~Kudryavtsev, P.~G.~Baranov, E.~N.~Mokhov, A.~N.~Anisimov
\paper On the Raman scattering, infrared absorption, and luminescence spectroscopy of aluminum nitride doped with beryllium
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 3
\pages 251--255
\mathnet{http://mi.mathnet.ru/phts5066}
\crossref{https://doi.org/10.21883/FTP.2021.03.50603.9554}
\elib{https://elibrary.ru/item.asp?id=45332272}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 3
\pages 328--332
\crossref{https://doi.org/10.1134/S1063782621030040}
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