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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 3, Pages 224–228
DOI: https://doi.org/10.21883/FTP.2021.03.50598.9540 (Mi phts5062) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Electronic properties of semiconductors

Evolution of electron transport upon resistive switching in porphyrazine films

K. A. Drozdova, I. V. Krylova, V. A. Vasilika, A. D. Kosova, T. V. Dubininabc, L. I. Ryabovab, D. R. Khokhlovad

a Faculty of Physics, Lomonosov Moscow State University, Moscow, Russia
b Lomonosov Moscow State University, Faculty of Chemistry, Moscow, Russia
c Institute of Physiologically Active Compounds RAS, Chernogolovka, Russia
d P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow, Russia
Full-text PDF (297 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2021.03.50598.9540
Abstract: Analysis of the current-voltage characteristics made it possible to determine the conductivity mechanisms corresponding to different stages of the formation of conducting filaments during resistive switching in porphyrazine films. Varying the temperature, the structure of the dielectric matrix, and the type of the majority charge carriers made it possible to assess the applicability of the model of conducting filaments to describe transport and to determine the mechanisms of conductivity for each state of the system.
Keywords: porphyrazine films, charge-carrier transport, resistive switching.
Funding agency Grant number
Russian Foundation for Basic Research 20-32-70118
The study was supported by the Russian Foundation for Basic Research, project no. 20-32-70118.
Received: 22.10.2020
Revised: 12.11.2020
Accepted: 12.11.2020
English version:
Semiconductors, 2021, Volume 55, Issue 3, Pages 296–300
DOI: https://doi.org/10.1134/S1063782621030052
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: K. A. Drozdov, I. V. Krylov, V. A. Vasilik, A. D. Kosov, T. V. Dubinina, L. I. Ryabova, D. R. Khokhlov, “Evolution of electron transport upon resistive switching in porphyrazine films”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 224–228; Semiconductors, 55:3 (2021), 296–300
Citation in format AMSBIB
\Bibitem{DroKryVas21}
\by K.~A.~Drozdov, I.~V.~Krylov, V.~A.~Vasilik, A.~D.~Kosov, T.~V.~Dubinina, L.~I.~Ryabova, D.~R.~Khokhlov
\paper Evolution of electron transport upon resistive switching in porphyrazine films
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 3
\pages 224--228
\mathnet{http://mi.mathnet.ru/phts5062}
\crossref{https://doi.org/10.21883/FTP.2021.03.50598.9540}
\elib{https://elibrary.ru/item.asp?id=45332267}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 3
\pages 296--300
\crossref{https://doi.org/10.1134/S1063782621030052}
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  • https://www.mathnet.ru/eng/phts/v55/i3/p224
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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