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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 4, Pages 360–364
DOI: https://doi.org/10.21883/FTP.2021.04.50741.9561 (Mi phts5058) 		 
Manufacturing, processing, testing of materials and structures

Study of the influence of design features of a magnetron sputtering chamber on the electrical and optical properties of indium-tin oxide films

D. A. Kudriashova, A. A. Maksimovaab, E. A. Vyacheslavovaa, A. V. Uvarova, I. A. Morozova, A. I. Baranova, A. O. Monastyrenkoab, A. S. Gudovskikha

a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
b Saint Petersburg Electrotechnical University "LETI", St. Petersburg, Russia
Full-text PDF (150 kB)
DOI: https://doi.org/10.21883/FTP.2021.04.50741.9561
Abstract: The influence of the relative position of the magnetron and the substrate on the electrical and optical properties of the forming indium tin oxide (ITO) layers is demonstrated. The reasons for this behavior are considered and the role of oxygen in the onset of inhomogeneity of the properties of ITO films is shown. It is shown that, in the growth mode without additional oxygen addition, the resistivity of ITO films differs by an order of magnitude ((2–14)$\cdot$10$^{-2}$ Ohm $\cdot$ cm) for different positions of the substrate on the substrate holder along the radius in the range of 0–14 cm. In this case, absorption spectra are observed differences in the shape of the short-wavelength region of the spectrum. The addition of an insignificant (0.1sccm) amount of oxygen to the working chamber during the growth of the oxide leads to a significant increase in the homogeneity of the electrical and optical properties of ITO.
Keywords: magnetron sputtering, indium tin oxide, thin films.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0791-2020-0004
The research presented in this paper was carried out within the framework of project no. 0791-2020-0004, supported by the Ministry of Science and Higher Education of the Russian Federation.
Received: 25.11.2020
Revised: 07.12.2020
Accepted: 07.12.2020
English version:
Semiconductors, 2021, Volume 55, Issue 4, Pages 410–414
DOI: https://doi.org/10.1134/S1063782621040072
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. A. Kudriashov, A. A. Maksimova, E. A. Vyacheslavova, A. V. Uvarov, I. A. Morozov, A. I. Baranov, A. O. Monastyrenko, A. S. Gudovskikh, “Study of the influence of design features of a magnetron sputtering chamber on the electrical and optical properties of indium-tin oxide films”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 360–364; Semiconductors, 55:4 (2021), 410–414
Citation in format AMSBIB
\Bibitem{KudMakVya21}
\by D.~A.~Kudriashov, A.~A.~Maksimova, E.~A.~Vyacheslavova, A.~V.~Uvarov, I.~A.~Morozov, A.~I.~Baranov, A.~O.~Monastyrenko, A.~S.~Gudovskikh
\paper Study of the influence of design features of a magnetron sputtering chamber on the electrical and optical properties of indium-tin oxide films
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 4
\pages 360--364
\mathnet{http://mi.mathnet.ru/phts5058}
\crossref{https://doi.org/10.21883/FTP.2021.04.50741.9561}
\elib{https://elibrary.ru/item.asp?id=46474716}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 4
\pages 410--414
\crossref{https://doi.org/10.1134/S1063782621040072}
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