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Semiconductor structures, low-dimensional systems, quantum phenomena
Magnetophonon oscillations of magnetoresistance in broken-gap InAs/GaS quantum well
I. V. Kochman, M. P. Mikhailova, A. I. Veinger, R. V. Parfen'ev Ioffe Institute, St. Petersburg, Russia
Abstract:
For the first time magnetoresistance oscillations from the spectra of microwave absorption were obtained in a broken-gap InAs/GaSb quantum well structure with an inverted band alignment. In the wide temperature range (2.7–270 K) we observed distinct magnetophonon oscillations of magnetoresistance caused by resonant scattering of Landau- quantised Dirac electrons on acoustic phonons in an inverted InAs/GaSb quantum well. Here we studied electron transitions between Landau levels with an acoustic phonon energy equal to the two-dimensional electron energy with the momentum 2$k_{\mathrm{F}}$ in InAs. Magnetoresistance spectra were obtained by means of contactless electron spin resonance technique on the quantum well InAs/GaSb samples with a semi-insulating substrate.
Keywords:
magnetophonon oscillations of magnetoresistance, acoustic phonons.
Received: 02.12.2020 Revised: 11.12.2020 Accepted: 11.12.2020
Citation:
I. V. Kochman, M. P. Mikhailova, A. I. Veinger, R. V. Parfen'ev, “Magnetophonon oscillations of magnetoresistance in broken-gap InAs/GaS quantum well”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 313–318
Linking options:
https://www.mathnet.ru/eng/phts5050 https://www.mathnet.ru/eng/phts/v55/i4/p313
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Abstract page: | 70 | Full-text PDF : | 34 |
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