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This article is cited in 3 scientific papers (total in 3 papers)
Spectroscopy, interaction with radiation
Emission spectra peculiarities of ZnSå $\cdot$ Î crystals in the band anticrossing theory context
V. I. Oleshkoa, S. S. Vil'chinskayaa, N. K. Morozovab a Tomsk Polytechnic University, Tomsk, Russia
b National Research University "Moscow Power Engineering Institute", Moscow, Russia
Abstract:
The effect of the structural features of self-activated zinc selenide and crystals with activators on the emission spectra is investigated in band anticrossing theory. Numerous contradictory published data make it difficult to understand this issue. Band anticrossing theory in its current statement requires taking into account the effect of the isoelectronic oxygen impurity, which inevitably exists in the ZnSe lattice, on the band structure. The development of methods for calculating the equilibrium of intrinsic point defects suggests the use of these data in analyzing the optical properties of À$^{\mathrm{II}}$Â$^{\mathrm{IV}}$ compounds, including zinc selenide. The study is aimed at examining the features and nature of individual luminescence bands widely used to obtain information about crystal quality. The photoluminescence, cathodoluminescence, and pulsed luminescence spectra, as well as the excitation and stimulated emission spectra of ZnSe are investigated with the use of these features in a single context, taking into account the noted features. The stable states of crystals with stacking faults upon embedding activators or a background copper impurity are established. The data are of interest for the diagnostics of crystals applicable in lasers.
Keywords:
isoelectronic centers, activators, pulsed cathodoluminescence, stimulated luminescence, complex, bound exciton, stacking fault, multiband.
Received: 27.12.2020 Revised: 30.12.2020 Accepted: 31.12.2020
Citation:
V. I. Oleshko, S. S. Vil'chinskaya, N. K. Morozova, “Emission spectra peculiarities of ZnSå $\cdot$ Î crystals in the band anticrossing theory context”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 403–409; Semiconductors, 55:5 (2021), 511–517
Linking options:
https://www.mathnet.ru/eng/phts5034 https://www.mathnet.ru/eng/phts/v55/i5/p403
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