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Semiconductor physics
Effect of adhesive layers on photocurrent enhancement in near-infrared quantum-dot photodetectors coupled with metal-nanodisk arrays
A. I. Yakimovab, V. V. Kirienkoa, A. A. Bloshkinac, A. V. Dvurechenskiiac, D. E. Utkinac a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Tomsk State University
c Novosibirsk State University
Abstract:
We fabricated plasmon-enhanced planar Ge/Si quantum dots photodetectors on Silicon-on-insulator substrate coupled with regular array of metallic nanodisks on photodetector surface. It was demonstrated that insertion of supplementary adhesion layers between silicon substrate and noble metal required for stable structure results in suppression of localized surface plasmons resonance. Selection of the Al nanodisks without adhesion layers allows to increase the photodetectors efficiency by about 40 times at wavelength 1.2 $\mu$m and by 15 times at wavelength 1.55 $\mu$m.
Keywords:
localized surface plasmon, Ge/Si quantum dots, photodetectors.
Received: 02.03.2021 Revised: 12.03.2021 Accepted: 12.03.2021
Citation:
A. I. Yakimov, V. V. Kirienko, A. A. Bloshkin, A. V. Dvurechenskii, D. E. Utkin, “Effect of adhesive layers on photocurrent enhancement in near-infrared quantum-dot photodetectors coupled with metal-nanodisk arrays”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 596–601; Semiconductors, 55:8 (2021), 654–659
Linking options:
https://www.mathnet.ru/eng/phts5015 https://www.mathnet.ru/eng/phts/v55/i7/p596
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Abstract page: | 75 | Full-text PDF : | 24 |
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