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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 7, Pages 578–583
DOI: https://doi.org/10.21883/FTP.2021.07.51020.9559
(Mi phts5012)
 

Semiconductor structures, low-dimensional systems, quantum phenomena

Model of a “Two-dimensional metal–graphene-like compound” junction: consideration for interaction between the components

S. Yu. Davydova, O. V. Posrednikb

a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI", St. Petersburg, Russia
Abstract: With the account of interlayer interaction, system of graphene-like compound (GLC) and two-dimensional $d$-metal (2DM) is considered. Within the scope of the diagonal approach corresponding Green functions are obtained. Regime of GLC–2DM weak coupling is studied thoroughly and analytical expressions for the corrections to the occupation numbers, charge transfer and Schottky barrier height are fulfilled. It is demonstrated that the corrections obtained are of significant importance for the metals of the beginning and the end of the $d$-rows.
Keywords: Green's function, dispersion low, density of states, charge transfer, Schottky barrier.
Received: 25.11.2020
Revised: 18.03.2021
Accepted: 19.03.2021
English version:
Semiconductors, 2021, Volume 55, Issue 7, Pages 595–600
DOI: https://doi.org/10.1134/S1063782621070071
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. Yu. Davydov, O. V. Posrednik, “Model of a “Two-dimensional metal–graphene-like compound” junction: consideration for interaction between the components”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 578–583; Semiconductors, 55:7 (2021), 595–600
Citation in format AMSBIB
\Bibitem{DavPos21}
\by S.~Yu.~Davydov, O.~V.~Posrednik
\paper Model of a ``Two-dimensional metal–graphene-like compound'' junction: consideration for interaction between the components
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 7
\pages 578--583
\mathnet{http://mi.mathnet.ru/phts5012}
\crossref{https://doi.org/10.21883/FTP.2021.07.51020.9559}
\elib{https://elibrary.ru/item.asp?id=46488611}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 7
\pages 595--600
\crossref{https://doi.org/10.1134/S1063782621070071}
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