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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 7, Pages 537–540
DOI: https://doi.org/10.21883/FTP.2021.07.51011.9649
(Mi phts5006)
 

This article is cited in 8 scientific papers (total in 8 papers)

Electronic properties of semiconductors

Effect of gamma irradiation on the thermal switching of a GeS : Nd single crystal

A. S. Alekperova, A. O. Dashdemirova, T. G. Naghiyevb, S. H. Jabarovab

a Azerbaijan State Pedagogical University
b Azerbaijan State Economic University
Full-text PDF (151 kB) Citations (8)
Abstract: The effect of thermal switching of layered GeS : Nd single crystal is investigated in a wide range of temperature ($T$ = 80–350 K). Gamma irradiation effect at different doses (30 krad and 100 krad) on thermal switching of GeS : Nd single crystal was studied. It was found that the effect of thermal switching is not observed in the GeS : Nd crystal after gamma irradiation in low doses, with the formation of an ordered structure. The degradation is observed in the structure when gamma irradiation increased to 100 krad, resulting in the crystal loses its photosensitivity and thermal switching effect is not detected.
Keywords: single crystal, $\gamma$ irradiation, thermal switching, phase transition, low-resistance state, nanostructure, rare earth element.
Received: 17.03.2021
Revised: 22.03.2021
Accepted: 22.03.2021
English version:
Semiconductors, 2021, Volume 55, Issue 6, Pages 574–577
DOI: https://doi.org/10.1134/S1063782621070034
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Alekperov, A. O. Dashdemirov, T. G. Naghiyev, S. H. Jabarov, “Effect of gamma irradiation on the thermal switching of a GeS : Nd single crystal”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 537–540; Semiconductors, 55:6 (2021), 574–577
Citation in format AMSBIB
\Bibitem{AleDasNag21}
\by A.~S.~Alekperov, A.~O.~Dashdemirov, T.~G.~Naghiyev, S.~H.~Jabarov
\paper Effect of gamma irradiation on the thermal switching of a GeS : Nd single crystal
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 7
\pages 537--540
\mathnet{http://mi.mathnet.ru/phts5006}
\crossref{https://doi.org/10.21883/FTP.2021.07.51011.9649}
\elib{https://elibrary.ru/item.asp?id=46488605}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 6
\pages 574--577
\crossref{https://doi.org/10.1134/S1063782621070034}
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  • https://www.mathnet.ru/eng/phts/v55/i7/p537
  • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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