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This article is cited in 11 scientific papers (total in 11 papers)
Electronic properties of semiconductors
Effect of gamma irradiation on the thermal switching of a GeS : Nd single crystal
A. S. Alekperova, A. O. Dashdemirova, T. G. Naghiyevb, S. H. Jabarovab a Azerbaijan State Pedagogical University
b Azerbaijan State Economic University
Abstract:
The effect of thermal switching of layered GeS : Nd single crystal is investigated in a wide range of temperature ($T$ = 80–350 K). Gamma irradiation effect at different doses (30 krad and 100 krad) on thermal switching of GeS : Nd single crystal was studied. It was found that the effect of thermal switching is not observed in the GeS : Nd crystal after gamma irradiation in low doses, with the formation of an ordered structure. The degradation is observed in the structure when gamma irradiation increased to 100 krad, resulting in the crystal loses its photosensitivity and thermal switching effect is not detected.
Keywords:
single crystal, $\gamma$ irradiation, thermal switching, phase transition, low-resistance state, nanostructure, rare earth element.
Received: 17.03.2021 Revised: 22.03.2021 Accepted: 22.03.2021
Citation:
A. S. Alekperov, A. O. Dashdemirov, T. G. Naghiyev, S. H. Jabarov, “Effect of gamma irradiation on the thermal switching of a GeS : Nd single crystal”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 537–540; Semiconductors, 55:6 (2021), 574–577
Linking options:
https://www.mathnet.ru/eng/phts5006 https://www.mathnet.ru/eng/phts/v55/i7/p537
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