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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 8, Pages 689–692
DOI: https://doi.org/10.21883/FTP.2021.08.51141.9658 (Mi phts5002) 		 
Semiconductor physics

Suppression of the effect of quasi-saturation of current-voltage characteristics of power radio frequency lateral transistors

R. P. Alekseeva, M. I. Chernykha, A. N. Tsotsorina, I. V. Semeykina, G. V. Bykadorovab

a Research Institute of Electronic Engineering, Voronezh
b Voronezh State University
Full-text PDF (153 kB)
DOI: https://doi.org/10.21883/FTP.2021.08.51141.9658
Abstract: Was been performed the analysis of electric parameters of a new generation of RF LDMOS transistors developed by JSC “NIIET”. In comparison with the devices of the previous generation was revealed a significant suppression of the effect of quasi-saturation of $I_D$–$U_G$ and $I_D$–$U_D$ characteristics. Comparison with a foreign-made device shows that the achieved results are close to the world level.
Keywords: power RF transistors, LDMOS, quasi-saturation of I–V characteristics.
Received: 05.04.2021
Revised: 12.04.2021
Accepted: 12.04.2021
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. P. Alekseev, M. I. Chernykh, A. N. Tsotsorin, I. V. Semeykin, G. V. Bykadorova, “Suppression of the effect of quasi-saturation of current-voltage characteristics of power radio frequency lateral transistors”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 689–692
Citation in format AMSBIB
\Bibitem{AleCheTso21}
\by R.~P.~Alekseev, M.~I.~Chernykh, A.~N.~Tsotsorin, I.~V.~Semeykin, G.~V.~Bykadorova
\paper Suppression of the effect of quasi-saturation of current-voltage characteristics of power radio frequency lateral transistors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 8
\pages 689--692
\mathnet{http://mi.mathnet.ru/phts5002}
\crossref{https://doi.org/10.21883/FTP.2021.08.51141.9658}
\elib{https://elibrary.ru/item.asp?id=46480623}
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