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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 8, Pages 682–687
DOI: https://doi.org/10.21883/FTP.2021.08.51139.9664 (Mi phts5001) 		 
Semiconductor structures, low-dimensional systems, quantum phenomena

Spectral and electrical properties of led heterostructures with InAs-based active layer

A. A. Semakovaa, A. M. Smirnova, N. L. Bazhenovb, K. J. Mynbaevb, A. A. Pivovarovab, A. V. Chernyaevbcd, S. S. Kizhaevc, N. D. Stoyanovc

a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
b Ioffe Institute, St. Petersburg
c Microsensor Technology, St. Petersburg
d S. M. Budyonny Military Academy of Communications, St. Petersburg, Russia
Full-text PDF (269 kB)
DOI: https://doi.org/10.21883/FTP.2021.08.51139.9664
Abstract: The results of the study of optical and structural properties of epitaxial InAs layers grown on an $n$-InAs substrate, and spectral and electrical properties of light-emitting diode (LED) heterostructures with an InAs active layer and various design and chemical composition of barrier layers are presented; the properties of heterostructures were studied in the temperature range 4.2–300 K. A significant influence of the degree of substrate doping and the properties of heterointerfaces on the form of emission spectra and power characteristics of heterostructures is shown. The mechanisms of the carrier transport are studied, and the prevalence of the diffusion component of the current at temperatures above 200 K and the presence of the tunneling component at lower temperatures are shown.
Keywords: InAs, heterostructures, luminescence, recombination.
Funding agency Grant number
Russian Foundation for Basic Research 19-32-90091
Received: 09.04.2021
Revised: 15.04.2021
Accepted: 15.04.2021
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Semakova, A. M. Smirnov, N. L. Bazhenov, K. J. Mynbaev, A. A. Pivovarova, A. V. Chernyaev, S. S. Kizhaev, N. D. Stoyanov, “Spectral and electrical properties of led heterostructures with InAs-based active layer”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 682–687
Citation in format AMSBIB
\Bibitem{SemSmiBaz21}
\by A.~A.~Semakova, A.~M.~Smirnov, N.~L.~Bazhenov, K.~J.~Mynbaev, A.~A.~Pivovarova, A.~V.~Chernyaev, S.~S.~Kizhaev, N.~D.~Stoyanov
\paper Spectral and electrical properties of led heterostructures with InAs-based active layer
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 8
\pages 682--687
\mathnet{http://mi.mathnet.ru/phts5001}
\crossref{https://doi.org/10.21883/FTP.2021.08.51139.9664}
\elib{https://elibrary.ru/item.asp?id=46480622}
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