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Electronic properties of semiconductors
Temperature dependence of the band gap of AgIn$_{8}$S$_{12.5}$ single crystals
I. V. Bondar'a, A. A. Feshchenkoa, V. V. Khoroshkoa, V. N. Pavlovskiib, I. E. Svitsiankoub, G. P. Yablonskiia a Belarussian State University of Computer Science and Radioelectronic Engineering, Minsk, Belarus
b B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk
Abstract:
AgIn$_{8}$S$_{12.5}$ single crystals were grown by the vertical Bridgman method. The composition of the single crystals was determined by the X-ray spectral analysis method, and the crystal structure was determined by the X-ray diffraction method. It is shown that the grown single crystals crystallized in the cubic spinel structure. Transmittance spectra in the temperature range 10–320 K were used to determine the band gap of the crystals, which increased with decreasing the temperature.
Keywords:
Bridgman method, AgInS single crystals, crystal structure, transmittance spectra, band gap.
Received: 11.01.2021 Revised: 02.04.2021 Accepted: 16.04.2021
Citation:
I. V. Bondar', A. A. Feshchenko, V. V. Khoroshko, V. N. Pavlovskii, I. E. Svitsiankou, G. P. Yablonskii, “Temperature dependence of the band gap of AgIn$_{8}$S$_{12.5}$ single crystals”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 669–672
Linking options:
https://www.mathnet.ru/eng/phts4999 https://www.mathnet.ru/eng/phts/v55/i8/p669
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Abstract page: | 47 | Full-text PDF : | 16 |
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