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XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021
Generation of spin currents in $n$-silicon doped with phosphorus, antimony and bismuth and the influence of spin scattering processes with flip on them
A. A. Ezhevskiia, D. V. Guseinova, A. V. Soukhorukova, E. A. Kalininaa, A. V. Novikovb, D. V. Yurasovb, N. S. Gusevb a Lobachevsky State University of Nizhny Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract:
Doping of silicon with bismuth leads to additional spin scattering of the conduction electron by the spin-orbit potential introduced by a heavy donor. In this paper, we discuss spin flip scattering influence on the generation of spin currents in silicon with electronic conductivity. Based on the theory of spin pumping and the diffusion model, the values of spin currents and voltages of the ISHE are calculated with varying the type of donor and its concentration and the spin diffusion lengths. Calculations made it possible to find the dependences of the magnitudes of the effects on the parameters of silicon layers doped with bismuth, and to explain the absence of ISHE signals when the silicon layer is doped only with phosphorus or antimony with a concentration of $N_d>$ 10$^{19}$ cm$^{-3}$.
Keywords:
spin currents, spin relaxation, silicon, shallow donors, ferromagnetic-silicon structures, ferromagnetic resonance, spin-orbit interaction, spin diffusion.
Received: 09.04.2021 Revised: 19.04.2021 Accepted: 19.04.2021
Citation:
A. A. Ezhevskii, D. V. Guseinov, A. V. Soukhorukov, E. A. Kalinina, A. V. Novikov, D. V. Yurasov, N. S. Gusev, “Generation of spin currents in $n$-silicon doped with phosphorus, antimony and bismuth and the influence of spin scattering processes with flip on them”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 654–658
Linking options:
https://www.mathnet.ru/eng/phts4996 https://www.mathnet.ru/eng/phts/v55/i8/p654
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