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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 8, Pages 629–636
DOI: https://doi.org/10.21883/FTP.2021.08.51127.03 (Mi phts4992) 		 
This article is cited in 3 scientific papers (total in 3 papers)

XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Photoconductivity and infrared-light absorption in p-GaAs/AlGaAs quantum wells

M. Ya. Vinnichenkoa, I. S. Makhova, N. Yu. Kharina, S. V. Grafa, V. Yu. Panevina, I. V. Sedovab, S. V. Sorokinb, D. A. Firsova

a Peter the Great St. Petersburg Polytechnic University
b Ioffe Institute, St. Petersburg
Full-text PDF (390 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2021.08.51127.03
Abstract: The low-temperature impurity-assisted photoconductivity and absorption spectra of a nanostructure with acceptor-doped multiple GaAs/AlGaAs quantum wells are investigated. The experimental absorption and photoconductivity spectra agree well with each other. Using the calculated energy spectrum of the hole and acceptor states in the quantum wells, the contributions of the transitions of holes from the ground acceptor state to the delocalized states of valence subbands and excited impurity states, and the contributions of the acceptor photoionization to the states above a quantum well, are identified.
Keywords: quantum wells, impurities, acceptor levels, photoconductivity.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation
Russian Science Foundation 18-72-00034
This study was carried out within the state assignment of the Ministry of Science and Higher Education of the Russian Federation and supported by the Russian Science Foundation, project no. 18-72-00034.
Received: 09.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021
English version:
Semiconductors, 2021, Volume 55, Issue 9, Pages 710–716
DOI: https://doi.org/10.1134/S1063782621080212
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. Ya. Vinnichenko, I. S. Makhov, N. Yu. Kharin, S. V. Graf, V. Yu. Panevin, I. V. Sedova, S. V. Sorokin, D. A. Firsov, “Photoconductivity and infrared-light absorption in p-GaAs/AlGaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 629–636; Semiconductors, 55:9 (2021), 710–716
Citation in format AMSBIB
\Bibitem{VinMakKha21}
\by M.~Ya.~Vinnichenko, I.~S.~Makhov, N.~Yu.~Kharin, S.~V.~Graf, V.~Yu.~Panevin, I.~V.~Sedova, S.~V.~Sorokin, D.~A.~Firsov
\paper Photoconductivity and infrared-light absorption in $p$-GaAs/AlGaAs quantum wells
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 8
\pages 629--636
\mathnet{http://mi.mathnet.ru/phts4992}
\crossref{https://doi.org/10.21883/FTP.2021.08.51127.03}
\elib{https://elibrary.ru/item.asp?id=46480613}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 9
\pages 710--716
\crossref{https://doi.org/10.1134/S1063782621080212}
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  • https://www.mathnet.ru/eng/phts4992
  • https://www.mathnet.ru/eng/phts/v55/i8/p629
    • This publication is cited in the following 3 articles:
    1. Ulugbek I. Erkaboev, Rustamjon G. Rakhimov, Jasurbek I. Mirzaev, Nozimjon A. Sayidov, Ulugbek M. Negmatov, “Modeling the Temperature Dependence of Shubnikov-De Haas Oscillations in Light-Induced Nanostructured Semiconductors”, East Eur. J. Phys., 2024, no. 1, 485  crossref
    2. U. I. Erkaboev, G. Gulyamov, M. Dadamirzaev, R. G. Rakhimov, J. I. Mirzaev, N. A. Sayidov, U. M. Negmatov, “The influence of light on transverse magnetoresistance oscillations in low-dimensional semiconductor structures”, Indian J Phys, 2024  crossref
    3. ERKABOEV U.I., RAKHIMOV R.G., MIRZAEV J.I., SAYIDOV N.A, NEGMATOV U.M., “Influence of Temperature and Light on Magnetoresistance and Electrical Conductivity Oscillations in Quantum Well Heterostructured Semiconductors”, Rom. J. Phys., 69:5-6 (2024), 610  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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