Modeling the response of a microwave low-barrier uncooled Mott diode to the action of heavy ions of outer space and femtosecond laser pulses

A theoretical analysis of the degradation of the current-voltage characteristic and transient ionization processes occurring in a low-barrier uncooled GaAs Mott diode under the action of heavy ions of outer space and laser pulses simulating them is carried out. The response of the diode to the action of an arsenic ion with an energy of 200 MeV, corresponding to a linear energy transfer of 26 MeV$\cdot$cm$^2$/mg, is compared with the response to the action of femtosecond pulses of optical radiation with a duration of 10 fs with a wavelength of 870 nm and 670 nm.