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XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021
Electron spin relaxation and resonant cooling of nuclear spins in GaAs : Mn structures
A. E. Evdokimova, M. S. Kuznetsovaa, A. V. Mikhailova, K. V. Kavokina, R. I. Dzhioevb a St. Petersburg State University, Spin Optics Laboratory, St. Petersburg, Russia
b Ioffe Institute, St. Petersburg
Abstract:
The behavior of the electron spin relaxation time in bulk GaAs layers doped with Mn was studied experimentally. We investigated the dependence of the degree of circular polarization of photoluminescence in transverse and longitudinal magnetic fields. An increase in the relaxation time of the electron spin is found from 25 ns at low pumping power to 400 ns at the threshold pumping power. The effect of resonant cooling of the nuclear spin system by optically oriented electron spins is demonstrated.
Keywords:
GaAs : Mn structures, transverse and longitudinal magnetic fields, spin relaxation of electrons.
Received: 12.04.2021 Revised: 19.04.2021 Accepted: 19.04.2021
Citation:
A. E. Evdokimov, M. S. Kuznetsova, A. V. Mikhailov, K. V. Kavokin, R. I. Dzhioev, “Electron spin relaxation and resonant cooling of nuclear spins in GaAs : Mn structures”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 738–742; Semiconductors, 55:9 (2021), 726–730
Linking options:
https://www.mathnet.ru/eng/phts4975 https://www.mathnet.ru/eng/phts/v55/i9/p738
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Abstract page: | 43 | Full-text PDF : | 17 |
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