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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 10, Pages 932–936
DOI: https://doi.org/10.21883/FTP.2021.10.51447.9678 (Mi phts4966) 		 
Surface, interfaces, thin films

Silicon-doped GaSb grown by MOVPE in a wide range of the V/III ratio

R. V. Levin, A. S. Vlasov, B. V. Pushnii

Ioffe Institute, St. Petersburg
Full-text PDF (168 kB)
DOI: https://doi.org/10.21883/FTP.2021.10.51447.9678
Abstract: Charachterization of Si-doped GaSb epitaxial layers grown by metal organic vapor phase epitaxy is presented. Samples are grown at constant SiH$_4$ flow with a TMSb/TEGa ratio ranged from 1 to 50. X-ray diffraction, Raman scattering, photoluminescence, resistivity, free carrier concentration and their mobility are studied.
Keywords: metal-organic vapor-phase epitaxy, TMSb/TEGa ratio, epitaxial layer, gallium antimonide, silicon doping.
Received: 13.05.2021
Revised: 25.05.2021
Accepted: 25.05.2021
English version:
Semiconductors, 2021, Volume 55, Issue 11, Pages 850–854
DOI: https://doi.org/10.1134/S1063782621100158
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. V. Levin, A. S. Vlasov, B. V. Pushnii, “Silicon-doped GaSb grown by MOVPE in a wide range of the V/III ratio”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 932–936; Semiconductors, 55:11 (2021), 850–854
Citation in format AMSBIB
\Bibitem{LevVlaPus21}
\by R.~V.~Levin, A.~S.~Vlasov, B.~V.~Pushnii
\paper Silicon-doped GaSb grown by MOVPE in a wide range of the V/III ratio
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 10
\pages 932--936
\mathnet{http://mi.mathnet.ru/phts4966}
\crossref{https://doi.org/10.21883/FTP.2021.10.51447.9678}
\elib{https://elibrary.ru/item.asp?id=46486072}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 11
\pages 850--854
\crossref{https://doi.org/10.1134/S1063782621100158}
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