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XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021
Silicon metal–oxide–semiconductor transistor with a dependent pocket contact and two-layer polysilicon gate
T. A. Shobolovaa, A. S. Mokeeva, S. D. Rudakova, S. V. Obolenskyab, E. L. Shobolova a Branch of the Russian Federal Nuclear Center–All-Russia Research Institute of Experimental Physics, Sedakov Measuring Systems Research Institute, 603137, Nizhny Novgorod, Russia
b Lobachevsky State University of Nizhny Novgorod
Abstract:
The characteristics of two design-technology versions of a silicon metal–oxide–semiconductor (MOS) silicon on insulator (SOI) transistor with a source-aligned substrate contact, with one or two polysilicon gate layers are compared. Numerical simulation shows that transistors with a double-layer polysilicon gate have improved reliability, an increased processing speed, and higher resistance to ionizing radiation. The self-aligned fabrication technology of transistors with a dependent pocket contact and double-layer polysilicon gate is proposed, which makes it possible to implement transistors with a large gate width-to-length ratio (to 100 and higher). The described design-technology features of transistor fabrication allow additional control of the transistor channel, improvement in its characteristics, and expansion of the field of application.
Keywords:
MOS transistor, SOI, double-layer polysilicon, dependent pocket contact, “wide” transistor.
Received: 12.04.2021 Revised: 19.04.2021 Accepted: 19.04.2021
Citation:
T. A. Shobolova, A. S. Mokeev, S. D. Rudakov, S. V. Obolensky, E. L. Shobolov, “Silicon metal–oxide–semiconductor transistor with a dependent pocket contact and two-layer polysilicon gate”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 916–921; Semiconductors, 55:12 (2021), 885–890
Linking options:
https://www.mathnet.ru/eng/phts4963 https://www.mathnet.ru/eng/phts/v55/i10/p916
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Abstract page: | 43 | Full-text PDF : | 29 |
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