Initial stages of growth of semipolar AlN on a nanopatterned Si(100) substrate

Scanning electron microscopy was used to study the initial stages of the formation of semipolar AlN(10$\bar1$1) and AlN(10$\bar1$2) layers during epitaxy of organometallic compounds on a Si(100) substrate, on the surface of which a V-shaped nanostructure with an element size $<$ 100 nm was formed (the substrate is NP-Si(100)). It is shown that the nucleation of polycrystalline AlN crystals are formed at the initial stage of epitaxy on the NP-Si(100) substrate, and then, depending on the crystallographic orientation of the V-walls, the crystals are formed, faceted by the AlN(10$\bar1$1) planes on Si(111) or AlN(10$\bar1$2) on Si(111) misoriented in the [110] direction by 7$^\circ$.