Composition and morphology of Si(111) surface with SiO$_{2}$ film of different thickness

In this work, the composition, morphology, and electronic structure of SiO$_{2}$ nanofilms of various thicknesses, created by thermal oxidation on the Si(111) surface, have been studied. It is shown that up to a thickness of 30–40 $\mathring{\mathrm{A}}$, the film has an island character. At $d\ge$60$\mathring{\mathrm{A}}$, a homogeneous continuously film of SiO$_{2}$ is formed and the stoichiometric surface roughness of which does not exceed 1.5–2 nm. Regardless of the film thickness of the SiO$_{2}$ appreciable interdiffusion of atoms at the interface SiO$_{2}$–Si not observed. The regularities of the change in the composition, the degree of surface coverage, and the energy of plasma oscillations with a change in the thickness of the SiO$_{2}$/Si(111) films in the range from 20 to 120$\mathring{\mathrm{A}}$ have been determined.