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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 11, Pages 1021–1026
DOI: https://doi.org/10.21883/FTP.2021.11.51555.9707 (Mi phts4936) 		 
Spectroscopy, interaction with radiation

Properties of compliant porous silicon-based substrates formed by two-stage etching

P. V. Seredina, A. S. Len'shina, Abduljabbar Riyad Khuderb, D. L. Goloshchapova, M. A. Kharajidia, I. N. Arsent'evc, I. A. Kasatkind

a Voronezh State University
b Ministry of Education/General Directorate of Education in Baghdad, The third Karkh Governorate, Iraq
c Ioffe Institute, St. Petersburg
d Saint Petersburg State University
Full-text PDF (1232 kB)
DOI: https://doi.org/10.21883/FTP.2021.11.51555.9707
Abstract: We report on the effect of etching modes and their combination on the design, microstructural and optical properties of pliable substrates based on porous silicon. Based on the data of a complex of microstructural and spectroscopic methods of analysis, it was shown that, with constant parameters of the crystal lattice, the value of residual stresses, crystallite size, volume of the crystalline fraction, as well as the reflectivity and energy of direct transitions in the porous silicon layer depend on the combination of etching modes, but not always correlate with the value of the layer porosity calculated from the analysis of SEM images.
Keywords: Si, porous layer, pliable substrate.
Funding agency Grant number
Russian Science Foundation 19-72-10007
Ministry of Education and Science of the Russian Federation ФЗГУ-2020-0036
Received: 05.07.2021
Revised: 12.07.2021
Accepted: 12.07.2021
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. V. Seredin, A. S. Len'shin, Abduljabbar Riyad Khuder, D. L. Goloshchapov, M. A. Kharajidi, I. N. Arsent'ev, I. A. Kasatkin, “Properties of compliant porous silicon-based substrates formed by two-stage etching”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1021–1026
Citation in format AMSBIB
\Bibitem{SerLenKhu21}
\by P.~V.~Seredin, A.~S.~Len'shin, Abduljabbar~Riyad~Khuder, D.~L.~Goloshchapov, M.~A.~Kharajidi, I.~N.~Arsent'ev, I.~A.~Kasatkin
\paper Properties of compliant porous silicon-based substrates formed by two-stage etching
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 11
\pages 1021--1026
\mathnet{http://mi.mathnet.ru/phts4936}
\crossref{https://doi.org/10.21883/FTP.2021.11.51555.9707}
\elib{https://elibrary.ru/item.asp?id=46668670}
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