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Reviews
Monopolarity of hot charge carrier multiplication in A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors at high electric field and noiseless avalanche photodiodes (a review)
M. P. Mikhailova, A. P. Dmitriev, I. A. Andreev, E. V. Ivanov, E. V. Kunitsyna, Yu. P. Yakovlev Ioffe Institute, St. Petersburg
Abstract:
The results of theoretical and experimental studies of impact ionization processes and charge carrier heating in multi-valley A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors at high electric field are presented and their relationship with the features of the band structure is discussed. A role of subsidiary $L$- and $X$-valleys, complex structure of the valence band and orientation dependence of the ionization coefficients are taken into account. A new approach to the choice of semiconductor materials with a large ratio of the ionization coefficients of holes and electrons to create the noiseless avalanche photodiodes due to monopolarity of hot charge carrier multiplication is proposed.
Keywords:
impact ionization, multi-valley semiconductors, band structure, monopolarity of multiplication, avalanche photodiodes.
Received: 10.06.2021 Revised: 25.06.2021 Accepted: 25.06.2021
Citation:
M. P. Mikhailova, A. P. Dmitriev, I. A. Andreev, E. V. Ivanov, E. V. Kunitsyna, Yu. P. Yakovlev, “Monopolarity of hot charge carrier multiplication in A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors at high electric field and noiseless avalanche photodiodes (a review)”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 995–1010
Linking options:
https://www.mathnet.ru/eng/phts4933 https://www.mathnet.ru/eng/phts/v55/i11/p995
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Abstract page: | 78 | Full-text PDF : | 54 |
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