Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 11, Pages 995–1010
DOI: https://doi.org/10.21883/FTP.2021.11.51552.9701
(Mi phts4933)
 

Reviews

Monopolarity of hot charge carrier multiplication in A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors at high electric field and noiseless avalanche photodiodes (a review)

M. P. Mikhailova, A. P. Dmitriev, I. A. Andreev, E. V. Ivanov, E. V. Kunitsyna, Yu. P. Yakovlev

Ioffe Institute, St. Petersburg
Abstract: The results of theoretical and experimental studies of impact ionization processes and charge carrier heating in multi-valley A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors at high electric field are presented and their relationship with the features of the band structure is discussed. A role of subsidiary $L$- and $X$-valleys, complex structure of the valence band and orientation dependence of the ionization coefficients are taken into account. A new approach to the choice of semiconductor materials with a large ratio of the ionization coefficients of holes and electrons to create the noiseless avalanche photodiodes due to monopolarity of hot charge carrier multiplication is proposed.
Keywords: impact ionization, multi-valley semiconductors, band structure, monopolarity of multiplication, avalanche photodiodes.
Received: 10.06.2021
Revised: 25.06.2021
Accepted: 25.06.2021
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. P. Mikhailova, A. P. Dmitriev, I. A. Andreev, E. V. Ivanov, E. V. Kunitsyna, Yu. P. Yakovlev, “Monopolarity of hot charge carrier multiplication in A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors at high electric field and noiseless avalanche photodiodes (a review)”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 995–1010
Citation in format AMSBIB
\Bibitem{MikDmiAnd21}
\by M.~P.~Mikhailova, A.~P.~Dmitriev, I.~A.~Andreev, E.~V.~Ivanov, E.~V.~Kunitsyna, Yu.~P.~Yakovlev
\paper Monopolarity of hot charge carrier multiplication in A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors at high electric field and noiseless avalanche photodiodes (a review)
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 11
\pages 995--1010
\mathnet{http://mi.mathnet.ru/phts4933}
\crossref{https://doi.org/10.21883/FTP.2021.11.51552.9701}
\elib{https://elibrary.ru/item.asp?id=46668667}
Linking options:
  • https://www.mathnet.ru/eng/phts4933
  • https://www.mathnet.ru/eng/phts/v55/i11/p995
  • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:78
    Full-text PDF :54
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024