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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 12, Pages 1260–1263
DOI: https://doi.org/10.21883/FTP.2021.12.51716.9603 (Mi phts4927) 		 
Manufacturing, processing, testing of materials and structures

Temperature stability features of ohmic contacts resistance to GaAs and GaN based nanoheterostructures

V. I. Egorkin, V. E. Zemlyakov, A. V. Nezhentsev, A. A. Zaitsev, V. I. Garmash

National Research University of Electronic Technology
Full-text PDF (94 kB)
DOI: https://doi.org/10.21883/FTP.2021.12.51716.9603
Abstract: The temperature stability of Ge/Au/Ni/Au ohmic contacts to GaAs nanoheterostructures and Ti/Al/Ni/Au ohmic contacts to GaN nanoheterostructures on silicon substrate was investigated. It has been established that optimization of the RTA process made it possible to obtain ohmic contacts with field emission current flow mechanism. The thermal stability of ohmic contacts for transistors and mesa resistors demonstrated the threshold behavior of the heat treatment temperature. The optimum process parameters for temperature stability and minimum contact resistance were defined.
Keywords: ohmic contact, gallium arsenide, gallium nitride.
Funding agency Grant number
Ministry of Science and Higher Education of the Russian Federation 075-11-2019-068
Received: 13.01.2021
Revised: 26.07.2021
Accepted: 17.08.2021
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. I. Egorkin, V. E. Zemlyakov, A. V. Nezhentsev, A. A. Zaitsev, V. I. Garmash, “Temperature stability features of ohmic contacts resistance to GaAs and GaN based nanoheterostructures”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1260–1263
Citation in format AMSBIB
\Bibitem{EgoZemNez21}
\by V.~I.~Egorkin, V.~E.~Zemlyakov, A.~V.~Nezhentsev, A.~A.~Zaitsev, V.~I.~Garmash
\paper Temperature stability features of ohmic contacts resistance to GaAs and GaN based nanoheterostructures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 12
\pages 1260--1263
\mathnet{http://mi.mathnet.ru/phts4927}
\crossref{https://doi.org/10.21883/FTP.2021.12.51716.9603}
\elib{https://elibrary.ru/item.asp?id=46667401}
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