Galvanomagnetic properties in anisotropic layered films based on bismuth chalcogenides

In anisotropic layered films of a multicomponent $n$-Bi$_{1.92}$In$_{0.02}$Te$_{2.85}$Se$_{0.15}$ solid solution in strong magnetic fields from 2 to 14 T at low temperatures, quantum oscillations of magnetoresistance associated with surface states of electrons in 3D topological insulators were studied. From the analysis of the spectral distribution of the amplitudes of quantum oscillations of magnetoresistance, the main parameters of the Dirac fermion surface states are determined. A comparison of the results with the data obtained by the method of scanning tunnel spectroscopy was carried out. It is shown that a high surface concentration determines the contribution of the Dirac fermion surface states to the thermoelectric properties of $n$-Bi$_{1.92}$In$_{0.02}$Te$_{2.85}$Se$_{0.15}$.