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Fizika i Tekhnika Poluprovodnikov, 1984, Volume 18, Issue 3, Pages 471–474 (Mi phts1654)  
Transfer of Excess Charge Carriers in a Variband Semiconductor in Case of Impurity Radiative Recombination

A. S. Volkov, A. L. Lipko, Sh. Meretliev, A. A. Shlensky

Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad
Full-text PDF (559 kB)
Received: 08.08.1983
Accepted: 15.10.1983
Document Type: Article
UDC: 621.315.592
Language: Russian
Citation: A. S. Volkov, A. L. Lipko, Sh. Meretliev, A. A. Shlensky, “Transfer of Excess Charge Carriers in a Variband Semiconductor in Case of Impurity Radiative Recombination”, Fizika i Tekhnika Poluprovodnikov, 18:3 (1984), 471–474
Citation in format AMSBIB
\Bibitem{VolLipMer84}
\by A.~S.~Volkov, A.~L.~Lipko, Sh.~Meretliev, A.~A.~Shlensky
\paper Transfer of Excess Charge Carriers in a Variband Semiconductor in Case of Impurity Radiative Recombination
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1984
\vol 18
\issue 3
\pages 471--474
\mathnet{http://mi.mathnet.ru/phts1654}
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