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Fizika i Tekhnika Poluprovodnikov, 1984, Volume 18, Issue 3, Pages 426–430 (Mi phts1645)  
Mechanism of Electroluminescence of Back-Biased Silicon $p{-}n$ Junction

L. A. Kosyachenko, E. F. Kukhto, V. M. Skljarchuk

Chernovtsy State University
Full-text PDF (721 kB)
Received: 01.08.1983
Accepted: 03.10.1983
Document Type: Article
UDC: 621.315.592
Language: Russian
Citation: L. A. Kosyachenko, E. F. Kukhto, V. M. Skljarchuk, “Mechanism of Electroluminescence of Back-Biased Silicon $p{-}n$ Junction”, Fizika i Tekhnika Poluprovodnikov, 18:3 (1984), 426–430
Citation in format AMSBIB
\Bibitem{KosKukSkl84}
\by L.~A.~Kosyachenko, E.~F.~Kukhto, V.~M.~Skljarchuk
\paper Mechanism of Electroluminescence of Back-Biased Silicon $p{-}n$ Junction
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1984
\vol 18
\issue 3
\pages 426--430
\mathnet{http://mi.mathnet.ru/phts1645}
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