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Fizika i Tekhnika Poluprovodnikov, 1984, Volume 18, Issue 3, Pages 417–420 (Mi phts1643)  
Temperature Dependence of Coefficients of Electron Trapping by a Hardening Center in $n$-Type Silicon

R. R. Dombrovsky, Yu. N. Serezhkin, N. I. Yakivchik

Ogarev Mordovia State University
Full-text PDF (590 kB)
Received: 14.07.1983
Accepted: 21.09.1983
Document Type: Article
UDC: 621.315.592
Language: Russian
Citation: R. R. Dombrovsky, Yu. N. Serezhkin, N. I. Yakivchik, “Temperature Dependence of Coefficients of Electron Trapping by a Hardening Center in $n$-Type Silicon”, Fizika i Tekhnika Poluprovodnikov, 18:3 (1984), 417–420
Citation in format AMSBIB
\Bibitem{DomSerYak84}
\by R.~R.~Dombrovsky, Yu.~N.~Serezhkin, N.~I.~Yakivchik
\paper Temperature Dependence of Coefficients of Electron Trapping by a Hardening Center in $n$-Type Silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1984
\vol 18
\issue 3
\pages 417--420
\mathnet{http://mi.mathnet.ru/phts1643}
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