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Fizika i Tekhnika Poluprovodnikov, 1984, Volume 18, Issue 3, Pages 402–407 (Mi phts1640)  
To the Determination of Recombination Rate at the Interface of Si$_{x}$Ge$_{1-x}{-}$GaAs Heterojunctions

O. Yu. Borkovskaya, N. L. Dmitruk, R. V. Konakova, N. N. Soldatenko, Yu. A. Tkhorik

Institute of Semiconductors of the Academy of Sciences of the Ukrainian SSR
Full-text PDF (767 kB)
Received: 05.07.1983
Accepted: 02.09.1983
Document Type: Article
UDC: 621.315.592
Language: Russian
Citation: O. Yu. Borkovskaya, N. L. Dmitruk, R. V. Konakova, N. N. Soldatenko, Yu. A. Tkhorik, “To the Determination of Recombination Rate at the Interface of Si$_{x}$Ge$_{1-x}{-}$GaAs Heterojunctions”, Fizika i Tekhnika Poluprovodnikov, 18:3 (1984), 402–407
Citation in format AMSBIB
\Bibitem{BorDmiKon84}
\by O.~Yu.~Borkovskaya, N.~L.~Dmitruk, R.~V.~Konakova, N.~N.~Soldatenko, Yu.~A.~Tkhorik
\paper To the Determination of Recombination Rate at the Interface of Si$_{x}$Ge$_{1-x}{-}$GaAs Heterojunctions
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1984
\vol 18
\issue 3
\pages 402--407
\mathnet{http://mi.mathnet.ru/phts1640}
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