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Fizika i Tekhnika Poluprovodnikov, 1984, Volume 18, Issue 3, Pages 393–397 (Mi phts1638)  
Characteristics of Si$-$SiO$_2$ Interface and Surface Hole Mobility in the Inversion Layer

V. Ya. Uritsky, O. V. Romanov, A. M. Yafyasov

Leningrad State University named after A. A. Zhdanova
Full-text PDF (656 kB)
Received: 01.07.1983
Accepted: 05.07.1983
Document Type: Article
UDC: 621.315.592
Language: Russian
Citation: V. Ya. Uritsky, O. V. Romanov, A. M. Yafyasov, “Characteristics of Si$-$SiO$_2$ Interface and Surface Hole Mobility in the Inversion Layer”, Fizika i Tekhnika Poluprovodnikov, 18:3 (1984), 393–397
Citation in format AMSBIB
\Bibitem{UriRomYaf84}
\by V.~Ya.~Uritsky, O.~V.~Romanov, A.~M.~Yafyasov
\paper Characteristics of Si$-$SiO$_2$ Interface and Surface Hole Mobility in the Inversion Layer
\jour Fizika i Tekhnika Poluprovodnikov
\yr 1984
\vol 18
\issue 3
\pages 393--397
\mathnet{http://mi.mathnet.ru/phts1638}
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