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Problemy Fiziki, Matematiki i Tekhniki (Problems of Physics, Mathematics and Technics), 2023, Issue 4(57), Pages 48–52
DOI: https://doi.org/10.54341/20778708_2023_4_57_48
(Mi pfmt934)
 

PHYSICS

Low temperature forming processes of nanocomposite films for optoelectronics

S. A. Khakhomova, A. V. Semchenkoa, V. E. Gaishuna, D. L. Kovalenkoa, V. V. Vaskevicha, K. D. Danilchenkoa, A. A. Maevskya, V. V. Malyutina-Bronskayab, S. U. Yuldashevc, V. I. Verland

a Francisk Skorina Gomel State University
b Optics, optoelectronics and laser technology, Minsk
c Center of Nanotechnologies Development, National University of Uzbekistan, Tashkent
d Institute of Applied Physics, State University of Moldova, Chisinau
References:
Abstract: The technique for the synthesis of sol-gel ITO films with embedded ZnGa$_2$O$_4$:Cr$^{3+}$, Yb$^{3+}$ (YAGG:Cr$^{3+}$, Yb$^{3+}$) nanocrystals exhibiting long-lasting afterglow on the surface of a photovoltaic solar cell has been developed. The luminescence intensity for a sol-gel film with ZnGa$_2$O$_4$:Cr$^{3+}$, Yb$^{3+}$ nanocrystals is an order of magnitude lower than for ITO films with YAGG:Cr$^{3+}$, Yb$^{3+}$ nanocrystals. The use of the Pechini method ensures the luminescence intensity of ITO films with YAGG:Cr$^{3+}$, Yb$^{3+}$ nanocrystals is 4 times higher than the chemical deposition method. Nanocrystals were introduced into an ITO-based matrix. In$_2$O$_3$:SnO$_2$ (ITO) is a semiconductor with a band gap of 3.7–4.3 eV, providing high transmittance in the visible light region. ITO thin films are used in optoelectronics and microelectronics as a transparent conductive contact for a range of optoelectronic products, including solar cells, LEDs, laser diodes and flat panel displays.
Keywords: film synthesis, sol-gel method, thin films, solar cells, functional structures.
Funding agency Grant number
Belarusian Republican Foundation for Fundamental Research T22УЗБ-074
Т22МЛД-003
National Agency for Research and Development of Moldova 20.80009.5007.14
22 80013.5007.6BI
Received: 04.09.2023
Bibliographic databases:
Document Type: Article
UDC: 539.23
Language: Russian
Citation: S. A. Khakhomov, A. V. Semchenko, V. E. Gaishun, D. L. Kovalenko, V. V. Vaskevich, K. D. Danilchenko, A. A. Maevsky, V. V. Malyutina-Bronskaya, S. U. Yuldashev, V. I. Verlan, “Low temperature forming processes of nanocomposite films for optoelectronics”, PFMT, 2023, no. 4(57), 48–52
Citation in format AMSBIB
\Bibitem{KhaSemGai23}
\by S.~A.~Khakhomov, A.~V.~Semchenko, V.~E.~Gaishun, D.~L.~Kovalenko, V.~V.~Vaskevich, K.~D.~Danilchenko, A.~A.~Maevsky, V.~V.~Malyutina-Bronskaya, S.~U.~Yuldashev, V.~I.~Verlan
\paper Low temperature forming processes of nanocomposite films for optoelectronics
\jour PFMT
\yr 2023
\issue 4(57)
\pages 48--52
\mathnet{http://mi.mathnet.ru/pfmt934}
\crossref{https://doi.org/10.54341/20778708_2023_4_57_48}
\edn{https://elibrary.ru/IRLYAF}
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    Проблемы физики, математики и техники
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