Modeling of plasma-chemical etching of silicon nitride functional layer on silicon dioxide sublayer in microelectronics technologies

Mathematical modeling of plasma-chemical etching of a silicon nitride film in the plasma of a gas mixture containing sulfur hexafluoride as a fluorine-containing gas in an amount of $70$–$91$ vol. $\%$ and oxygen in the amount of $30$–$9$ vol. $\%$, at plasma power density $I = 0,2$–$0,4$ W/cm$^2$ and operating pressure $P = 4$–$8$ Pa.