Radiation resistance of metal-alloyed organosilicon coatings deposited from the gas phase

The molecular structure, morphology, and radiation resistance of organosilicon coatings doped with copper or tungsten oxides have been determined. The coatings were formed from volatile products of electron beam dispersion of organosilicon resin and metal compounds mechanical mixtures. The copper- and tungsten-containing organosilicon coatings are characterized by a significantly lower content of methyl fragments. The effect of tungsten oxide is manifested in a decrease in the content of crosslinked fragments in the molecular structure of the coating. One-component and metal-doped organosilicon layers are highly dispersed and defect-free. Prolonged exposure to UV radiation does not cause noticeable changes in their morphology and molecular structure.