Investigation of the near-surface damaged layer in monocrystalline silicon wafers after chemical-mechanical polishing

In the process of chemical-mechanical polishing (CMP) of monocrystalline silicon wafers, suspensions based on nanosized silica dioxide are used. The quality of the surface of semiconductor substrates is characterized by roughness and depth of structural damaged layer. The damaged layer and the effect of surface roughness on the intensity of spectral lines are investigated by Raman spectroscopy. It is shown that the intensity of the main Raman mode of silicon strongly depends on the surface roughness.