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Problemy Fiziki, Matematiki i Tekhniki (Problems of Physics, Mathematics and Technics), 2018, Issue 1(34), Pages 33–37
(Mi pfmt549)
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PHYSICS
Ferroelectric properties of strontium-bismuth tantalate thin film deposited by RF magnetron sputtering method
J. E. Okojiea, D. A. Golosova, S. N. Melnikova, S. M. Zavadskia, V. V. Kolosb, E. A. Poplevkaa, Yu. A. Zhukovichb a Belarusian State University of Informatics and Radioelectronics, Minsk
b JSC “INTEGRAL”, Minsk
Abstract:
Characteristics of ferroelectric thin films of strontium-bismuth tantalate (SBT), which were deposited by means of HF magnetron
sputtering on Pt/TiO$_2$/SiO$_2$/Si substrates, are investigated. The dependences of permittivity, residual polarization, and coercitivity
of SBT films on the modes of subsequent annealing are established. Films with the residual polarization of $2P_r = 3.02$ $\mu$C/cm$^2$ and coercitivity of $2E_c = 140$ kV/cm are obtained at the annealing temperature of $800^\circ$ C. The dielectric constant and loss tangent at the frequency of $1.0$ MHz were accordingly equal to $\varepsilon = 125$ and $\mathrm{tg}\,\delta = 0.067$. The Curie temperature of the films reached $310$–$315^\circ$ C.
Keywords:
non-volatile memory, FeRAM, ferroelectric, strontium-bismuth tantalate, SBT, HF magnetron sputtering.
Received: 01.02.2018
Citation:
J. E. Okojie, D. A. Golosov, S. N. Melnikov, S. M. Zavadski, V. V. Kolos, E. A. Poplevka, Yu. A. Zhukovich, “Ferroelectric properties of strontium-bismuth tantalate thin film deposited by RF magnetron sputtering method”, PFMT, 2018, no. 1(34), 33–37
Linking options:
https://www.mathnet.ru/eng/pfmt549 https://www.mathnet.ru/eng/pfmt/y2018/i1/p33
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Abstract page: | 168 | Full-text PDF : | 80 | References: | 22 |
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