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Problemy Fiziki, Matematiki i Tekhniki (Problems of Physics, Mathematics and Technics), 2018, Issue 1(34), Pages 33–37
(Mi pfmt549)
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PHYSICS
Ferroelectric properties of strontium-bismuth tantalate thin film deposited by RF magnetron sputtering method
J. E. Okojiea, D. A. Golosova, S. N. Melnikova, S. M. Zavadskia, V. V. Kolosb, E. A. Poplevkaa, Yu. A. Zhukovichb a Belarusian State University of Informatics and Radioelectronics, Minsk
b JSC “INTEGRAL”, Minsk
Abstract:
Characteristics of ferroelectric thin films of strontium-bismuth tantalate (SBT), which were deposited by means of HF magnetron
sputtering on Pt/TiO2/SiO2/Si substrates, are investigated. The dependences of permittivity, residual polarization, and coercitivity
of SBT films on the modes of subsequent annealing are established. Films with the residual polarization of 2Pr=3.02 μC/cm2 and coercitivity of 2Ec=140 kV/cm are obtained at the annealing temperature of 800∘ C. The dielectric constant and loss tangent at the frequency of 1.0 MHz were accordingly equal to ε=125 and tgδ=0.067. The Curie temperature of the films reached 310–315∘ C.
Keywords:
non-volatile memory, FeRAM, ferroelectric, strontium-bismuth tantalate, SBT, HF magnetron sputtering.
Received: 01.02.2018
Citation:
J. E. Okojie, D. A. Golosov, S. N. Melnikov, S. M. Zavadski, V. V. Kolos, E. A. Poplevka, Yu. A. Zhukovich, “Ferroelectric properties of strontium-bismuth tantalate thin film deposited by RF magnetron sputtering method”, PFMT, 2018, no. 1(34), 33–37
Linking options:
https://www.mathnet.ru/eng/pfmt549 https://www.mathnet.ru/eng/pfmt/y2018/i1/p33
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Abstract page: | 187 | Full-text PDF : | 83 | References: | 22 |
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