Energy efficiency of thin-film solar cell on the basis of the $\mathrm{CuIn_{1-x}Ga_xSe_2}$

The problems of the temperature effects of thin-film solar cells on the basis of $\mathrm{CuIn_{1-x}Ga_xSe_2}$ compound on their characteristics at the different values of the thickness of the absorbing layer and the gallium concentration are considered. The optimal values of the absorbing layer thickness are determined. The simulation of the current-voltage characteristics of the considered design of the solar cell are carried out. It is shown that the efficiency of the solar cell can reach $22.65 \%$ with the fill factor $FF = 82.31 \%$, open circuit voltage $V_{OC} = 0.81 \%$, short circuit current $J_{SC} = 33.93$ mA/cm$^2$ when the optimal thickness of the absorbing layer is equal to $3\ \mu$m.