N. I. Stas’kov, I. V. Ivashkevich, N. A. Krekoten, “Ellipsometry of the transitive layers semiconductor–dielectric”, PFMT, 2013, no. 2(15), 18

Problemy Fiziki, Matematiki i Tekhniki (Problems of Physics, Mathematics and Technics)

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Problemy Fiziki, Matematiki i Tekhniki (Problems of Physics, Mathematics and Technics), 2013, Issue 2(15), Pages 18–24 (Mi pfmt233)

This article is cited in 1 scientific paper (total in 1 paper)

PHYSICS

Ellipsometry of the transitive layers semiconductor–dielectric

N. I. Stas’kov^a, I. V. Ivashkevich^a, N. A. Krekoten^b

^a A. A. Kuleshov Mogilev State University, Mogilev
^b Belmicrosystems Reserch & Desing Center Branch of the JSC INTEGRAL, Minsk

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Abstract: The polarizability bound of the layer with its optical thickness is established for thin oxide surfaces on a silicon substrate. It is revealed that the structure of the inhomogeneous surface layer can be interpreted by a five-layer model with 11 parameters at the heat treatment of the silicon plates.

Keywords: ellipsometry, optical model, transition layer, rough and optically inhomogeneous layers, polarizability.

Received: 04.04.2013

Document Type: Article

UDC: 535.51

Language: Russian

Citation: N. I. Stas’kov, I. V. Ivashkevich, N. A. Krekoten, “Ellipsometry of the transitive layers semiconductor–dielectric”, PFMT, 2013, no. 2(15), 18–24

Citation in format AMSBIB

\Bibitem{StaIvaKre13}

\by N.~I.~Stas’kov, I.~V.~Ivashkevich, N.~A.~Krekoten

\paper Ellipsometry of the transitive layers semiconductor--dielectric

\jour PFMT

\yr 2013

\issue 2(15)

\pages 18--24

\mathnet{http://mi.mathnet.ru/pfmt233}

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https://www.mathnet.ru/eng/pfmt/y2013/i2/p18

This publication is cited in the following 1 articles:

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