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Problemy Fiziki, Matematiki i Tekhniki (Problems of Physics, Mathematics and Technics), 2010, Issue 2(3), Pages 80–82
(Mi pfmt158)
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TECHNICS
Study of the preparation CuO and boron films
Zhu Penga, N. N. Fedosenkob, D. G. Piliptsovb, R. V. Bekarevichb a Nanjing University of Science and Technology, Nanjing, China
b F. Skorina Gomel State University, Gomel
Abstract:
The use of ion beam source sputtering, CuO and B films were deposited successively. The deposition speeds are 11 nm/min and 11.8 nm/min, respectively. The purity and morphology of the as-prepared films were investigated by power X-ray diffraction and atomic force microscopy. Thus it is can be seen that the sizes of the films were more homogeneous in B than CuO.
Keywords:
atomic force microscopy, boron, ion beam source sputtering, hot isostatic pressing, X-ray diffraction.
Received: 10.06.2010
Citation:
Zhu Peng, N. N. Fedosenko, D. G. Piliptsov, R. V. Bekarevich, “Study of the preparation CuO and boron films”, PFMT, 2010, no. 2(3), 80–82
Linking options:
https://www.mathnet.ru/eng/pfmt158 https://www.mathnet.ru/eng/pfmt/y2010/i2/p80
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Statistics & downloads: |
Abstract page: | 106 | Full-text PDF : | 51 | References: | 31 |
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