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Problemy Fiziki, Matematiki i Tekhniki (Problems of Physics, Mathematics and Technics), 2010, Issue 2(3), Pages 80–82 (Mi pfmt158)  

TECHNICS

Study of the preparation CuO and boron films

Zhu Penga, N. N. Fedosenkob, D. G. Piliptsovb, R. V. Bekarevichb

a Nanjing University of Science and Technology, Nanjing, China
b F. Skorina Gomel State University, Gomel
References:
Abstract: The use of ion beam source sputtering, CuO and B films were deposited successively. The deposition speeds are 11 nm/min and 11.8 nm/min, respectively. The purity and morphology of the as-prepared films were investigated by power X-ray diffraction and atomic force microscopy. Thus it is can be seen that the sizes of the films were more homogeneous in B than CuO.
Keywords: atomic force microscopy, boron, ion beam source sputtering, hot isostatic pressing, X-ray diffraction.
Received: 10.06.2010
Document Type: Article
UDC: 546.26
Language: English
Citation: Zhu Peng, N. N. Fedosenko, D. G. Piliptsov, R. V. Bekarevich, “Study of the preparation CuO and boron films”, PFMT, 2010, no. 2(3), 80–82
Citation in format AMSBIB
\Bibitem{ZhuFedPil10}
\by Zhu Peng, N.~N.~Fedosenko, D.~G.~Piliptsov, R.~V.~Bekarevich
\paper Study of the preparation CuO and boron films
\jour PFMT
\yr 2010
\issue 2(3)
\pages 80--82
\mathnet{http://mi.mathnet.ru/pfmt158}
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    Проблемы физики, математики и техники
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