The account of influence of the natural surface layer under investigation of silicon plates by the method of spectral ellipsometry

The possibility of exclusion of the influence of a natural surface layer is investigated at determination by the method of spectral ellipsometry dependencies $n(\lambda)$ and $k(\lambda)$ for a semiconductor substrate. It is shown that in the solution of the inverse ellipsometric problems a simple model of the transition layer with a single parameter which is determined by the thickness and refractive index of the layer can be used.