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Problemy Fiziki, Matematiki i Tekhniki (Problems of Physics, Mathematics and Technics), 2011, Issue 3(8), Pages 24–27
(Mi pfmt116)
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PHYSICS
Synthesis of heterostructures SiO$_2$/ZnO/Si by sol-gel method
V. V. Malyutina-Bronskayaa, А. М. Polikanina, V. B. Zalesskiya, A. V. Semchenkob, V. V. Sidskyb, V. E. Gayshunb a B. I. Stepanov Institute of Physics NASB, Minsk
b F. Skorina Gomel State University, Gomel
Abstract:
The analysis of voltage-current and voltage-farad characteristic of SiO$_2$/ZnO/Si-structures are described. SiO$_2$/ZnO/Si structures are synthesized by sol-gel metrod with using of zinc nitrate, chloride and acetate as initials. The defects density on the ZnO/Si boundary by Mott-Shottky relationship С$_2$(U) is calculated. The main conductivity mechanism (space-charge limited current) is determined. It is shown that sol-gel films synthesized from zinc acetate have good photosensitivity.
Keywords:
sol-gel, ZnO, voltage-current and voltage-farad characteristic.
Received: 02.09.2011
Citation:
V. V. Malyutina-Bronskaya, А. М. Polikanin, V. B. Zalesskiy, A. V. Semchenko, V. V. Sidsky, V. E. Gayshun, “Synthesis of heterostructures SiO$_2$/ZnO/Si by sol-gel method”, PFMT, 2011, no. 3(8), 24–27
Linking options:
https://www.mathnet.ru/eng/pfmt116 https://www.mathnet.ru/eng/pfmt/y2011/i3/p24
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