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Optics and Spectroscopy, 2019, Volume 126, Issue 2, Pages 180–185
DOI: https://doi.org/10.21883/OS.2019.02.47201.130-18 (Mi os783) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Physical optics

Electroluminescence of single InGaN/GaN micropyramids

A. V. Babicheva, D. V. Denisovbc, P. Lavenusde, G. Jacopinf, M. Tchernychevade, F. H. Juliende, H. Zhangdef

a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
c Saint Petersburg Electrotechnical University "LETI"
d Université Paris-Sud, Orsay
e Univ. Paris Saclay, Orsay, France
f École Polytechnique Fédérale de Lausanne
Citations (1)
DOI: https://doi.org/10.21883/OS.2019.02.47201.130-18
Abstract: The results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phase epitaxy. LED hetero structures based on single micropyramids demonstrate electroluminescence at a wavelength of 520–590 nm, which is shifted to the shortwave length region with increasing current pumping. These light-emission sources are of interest for the fabrication of high-intensity point light sources for biosensor applications.
Funding agency Grant number
Ministry of Science and Higher Education of the Russian Federation 16.9789.2017/БЧ
D.V. Denisov thanks a partial support of the Ministry of Education and Science of the Russian Federation, state order no. 16.9789.2017/BCh). We thank O. Kryliouk for providing the micropyramid samples.
Received: 17.05.2018
Revised: 19.10.2018
English version:
Optics and Spectroscopy, 2019, Volume 126, Issue 2, Pages 118–123
DOI: https://doi.org/10.1134/S0030400X19020036
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Babichev, D. V. Denisov, P. Lavenus, G. Jacopin, M. Tchernycheva, F. H. Julien, H. Zhang, “Electroluminescence of single InGaN/GaN micropyramids”, Optics and Spectroscopy, 126:2 (2019), 180–185; Optics and Spectroscopy, 126:2 (2019), 118–123
Citation in format AMSBIB
\Bibitem{BabDenLav19}
\by A.~V.~Babichev, D.~V.~Denisov, P.~Lavenus, G.~Jacopin, M.~Tchernycheva, F.~H.~Julien, H.~Zhang
\paper Electroluminescence of single InGaN/GaN micropyramids
\jour Optics and Spectroscopy
\yr 2019
\vol 126
\issue 2
\pages 180--185
\mathnet{http://mi.mathnet.ru/os783}
\crossref{https://doi.org/10.21883/OS.2019.02.47201.130-18}
\elib{https://elibrary.ru/item.asp?id=37481216}
\transl
\jour Optics and Spectroscopy
\yr 2019
\vol 126
\issue 2
\pages 118--123
\crossref{https://doi.org/10.1134/S0030400X19020036}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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