Abstract:
The results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phase epitaxy. LED hetero structures based on single micropyramids demonstrate electroluminescence at a wavelength of 520–590 nm, which is shifted to the shortwave length region with increasing current pumping. These light-emission sources are of interest for the fabrication of high-intensity point light sources for biosensor applications.
D.V. Denisov thanks a partial support of the Ministry of Education and Science of the Russian Federation, state order no. 16.9789.2017/BCh). We thank O. Kryliouk for providing the micropyramid samples.
Citation:
A. V. Babichev, D. V. Denisov, P. Lavenus, G. Jacopin, M. Tchernycheva, F. H. Julien, H. Zhang, “Electroluminescence of single InGaN/GaN micropyramids”, Optics and Spectroscopy, 126:2 (2019), 180–185; Optics and Spectroscopy, 126:2 (2019), 118–123