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This article is cited in 3 scientific papers (total in 3 papers)
Spectroscopy of condensed matter
Type of optical transitions at the edge of fundamental absorption of TlGaSe$_{2}$ and TInS$_{2}$ crystals subjected to $\gamma$ irradiation
R. M. Sardarly, F. T. Salmanov, N. A. Aliyeva Institute of radiation problems, ANAS, Baku, Azerbaijan
Abstract:
The effect of $\gamma$ irradiation on the optical properties of layered TlGaSe$_{2}$ and TInS$_{2}$ crystals in the wavelength range of 400–1100 nm at 300 K is studied. From the analysis of optical absorption spectra, the energies of direct and indirect optical interband transitions before and after $\gamma$ irradiation are determined. It is shown that as the $\gamma$-irradiation dose is accumulated in the range of 0–25 Mrad by TlGaSe$_{2}$ and TInS$_{2}$ single crystals, the energies of direct and indirect allowed optical transitions increase from $E_{\operatorname{gd}}$ = 2.06 eV and $E_{\operatorname{gi}}$ = 1.90 eV at $D$ = 0 Mrad to $E_{\operatorname{gd}}$ = 2.11 eV and $E_{\operatorname{gi}}$ = 1.98 eV at $D$ = 25 Mrad for TlGaSe$_{2}$ and $E_{\operatorname{gd}}$ = 2.32 eV crystals and $E_{\operatorname{gi}}$ = 2.27 eV at $D$ = 0 Mrad to $E_{\operatorname{gd}}$ = 2.35 and $E_{\operatorname{gi}}$ = 2.32 eV at $D$ = 25 Mrad for TInS$_{2}$ crystals. A decrease in the transmittance at doses from 0 to 5 Mrad and a further increase in the transmittance at the radiation dose $D$ = 25 Mrad are observed.
Keywords:
layered crystals, $\gamma$ irradiation, optical absorption.
Received: 07.11.2018 Revised: 07.11.2018 Accepted: 09.04.2019
Citation:
R. M. Sardarly, F. T. Salmanov, N. A. Aliyeva, “Type of optical transitions at the edge of fundamental absorption of TlGaSe$_{2}$ and TInS$_{2}$ crystals subjected to $\gamma$ irradiation”, Optics and Spectroscopy, 127:3 (2019), 420–424; Optics and Spectroscopy, 127:3 (2019), 454–458
Linking options:
https://www.mathnet.ru/eng/os608 https://www.mathnet.ru/eng/os/v127/i3/p420
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