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This article is cited in 5 scientific papers (total in 5 papers)
Spectroscopy of condensed matter
Luminescence and thermal stability of $F$-type defects in sapphire irradiated with pulsed ion beams
D. V. Ananchenkoa, S. V. Nikiforova, G. R. Ramazanovaa, R. I. Batalovb, R. M. Bayazitovb, H. A. Novikovb a Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
b Zavoisky Physical Technical Institute, Kazan Scientific Center of the Russian Academy of Sciences
Abstract:
Luminescence and thermal stability of defects formed in $\alpha$-Al$_{2}$O$_{3}$ single crystals under pulsed ion beam treatment (C$^+$/H$^+$ ions with an energy 300 keV, pulse duration 80 ns) were investigated. This type of irradiation leads to the intensive generation of both single $F$- and $F^+$-centers and more complex defects ($F_2$-type aggregate centers or vacancy-impurity complexes) in $\alpha$-Al$_{2}$O$_{3}$. It was confirmed by the results of optical absorption, photoluminescence, and pulsed cathodoluminescence measurements. The thermal stability of $F$-type defects formed in $\alpha$-Al$_{2}$O$_{3}$ under the pulsed ion beam treatment is comparable to the stability of radiation-induced defects in neutron-irradiated samples.
Keywords:
sapphire, luminescence, ion irradiation, radiation-induced defects.
Received: 06.08.2019 Revised: 05.11.2019 Accepted: 07.11.2019
Citation:
D. V. Ananchenko, S. V. Nikiforov, G. R. Ramazanova, R. I. Batalov, R. M. Bayazitov, H. A. Novikov, “Luminescence and thermal stability of $F$-type defects in sapphire irradiated with pulsed ion beams”, Optics and Spectroscopy, 128:2 (2020), 211–217; Optics and Spectroscopy, 128:2 (2020), 207–213
Linking options:
https://www.mathnet.ru/eng/os468 https://www.mathnet.ru/eng/os/v128/i2/p211
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