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Optics of low-dimensional structures, mesostructures, and metamaterials
The use of films of multilayer graphene as coatings of light-emitting GaAs structures
A. V. Alaferdovabc, O. V. Vikhrovaa, Yu. A. Danilova, B. N. Zvonkova, S. A. Moshkalevbd a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Center for Semiconducting Components and Nanotechnologies, Brazil
c The "Gleb Wataghin" Institute of Physics, University of Campinas, Brazil
d Universidade Estadual de Campinas, Brazil
Abstract:
A significant (almost two orders of magnitude) increase in the intensity of photo- and electroluminescence of a diode structure with an InGaAs/GaAsSb/GaAs quantum well, GaMnAs layer as a spin injector, and contact coating of a multilayer graphene film has been experimentally detected. The result has been explained by the possible formation of a hybrid system of multilayer graphene and GaAs semiconductor under the influence of He–Ne laser radiation, which leads to a change in the band diagram of the heterostructure.
Keywords:
light-emitting structure, GaAs, quantum well, multilayer graphene.
Received: 06.11.2019 Revised: 06.11.2019 Accepted: 26.11.2019
Citation:
A. V. Alaferdov, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, S. A. Moshkalev, “The use of films of multilayer graphene as coatings of light-emitting GaAs structures”, Optics and Spectroscopy, 128:3 (2020), 399–406; Optics and Spectroscopy, 128:3 (2020), 387–394
Linking options:
https://www.mathnet.ru/eng/os455 https://www.mathnet.ru/eng/os/v128/i3/p399
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Abstract page: | 33 | Full-text PDF : | 11 |
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