Raman light scattering in silicon with the crystal structure damaged by implantation of carbon ions

Raman scattering spectra from silicon whose crystal lattice is damaged by implantation of carbon ions with an energy of 40 keV and dose 5 $\times$ 10$^{16}$ cm$^{-2}$ have been recorded. The parameters of the Raman spectral line of the implanted samples have been measured after their thermal annealing in the temperature range 600–1150$^{\circ}$C. As a result of these measurements, the fraction of the crystalline phase was determined in relation to the annealing temperature. Two thermodynamic processes have been revealed that describe the kinetics of restoration of the crystal lattice during annealing. It has been shown that a silicon layer with a damaged crystal lattice does not restore its crystallinity during thermal annealing simultaneously in the entire volume, but in the form of clusters that become larger with increasing annealing temperature. The sizes of crystalline clusters are estimated for different annealing temperatures. The performed calculations take into account the complex dependence of the light absorption coefficient of a partially damaged crystal lattice on the fraction of the crystalline phase arising in it during thermal annealing.