Optics and Spectroscopy
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Optics and Spectroscopy:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Optics and Spectroscopy, 2020, Volume 128, Issue 5, Page 669 (Mi os1123)  
This article is cited in 1 scientific paper (total in 1 paper)

Optical sensors and transducers

The effect of high background and dead time of an InGaAs/InP single-photon avalanche photodiode on the registration of microsecond range near-infrared luminescence

P. S. Parfenova, A. P. Litvina, D. A. Onishchuka, K. A. Goncharb, K. Berwickc, A. V. Fedorova, A. V. Baranova

a School of Photonics, ITMO University, Saint-Petersburg, Russia
b Department of Physics, Lomonosov Moscow State University, Moscow, Russia
c School of Electrical and Electronic Engineering, Technological University Dublin, Ireland
Full-text PDF (29 kB) Citations (1)
Abstract: The effects of a high background count and a microsecond dead time interval on a gated InGaAs/InP single-photon avalanche photodiode (SPAD) during microsecond luminescence decay registration are discussed. It is shown that the background count rate of the SPAD limits its use for time-resolved and steady-spectral measurements, and that a “pile-up” effect appears in the microsecond range.
Keywords: near-infrared detector; photon counting; single-photon avalanche diode (SPAD), pile-up, counting loss.
Funding agency Grant number
Russian Science Foundation 18-13-00200
This work was supported by the Russian Science Foundation (agreement no. 18-13-00200).
Received: 27.01.2020
Revised: 27.01.2020
Accepted: 06.02.2020
English version:
Optics and Spectroscopy, 2020, Volume 128, Issue 5, Pages 674–677
DOI: https://doi.org/10.1134/S0030400X20050100
Document Type: Article
Language: English
Citation: P. S. Parfenov, A. P. Litvin, D. A. Onishchuk, K. A. Gonchar, K. Berwick, A. V. Fedorov, A. V. Baranov, “The effect of high background and dead time of an InGaAs/InP single-photon avalanche photodiode on the registration of microsecond range near-infrared luminescence”, Optics and Spectroscopy, 128:5 (2020), 669; Optics and Spectroscopy, 128:5 (2020), 674–677
Citation in format AMSBIB
\Bibitem{ParLitOni20}
\by P.~S.~Parfenov, A.~P.~Litvin, D.~A.~Onishchuk, K.~A.~Gonchar, K.~Berwick, A.~V.~Fedorov, A.~V.~Baranov
\paper The effect of high background and dead time of an InGaAs/InP single-photon avalanche photodiode on the registration of microsecond range near-infrared luminescence
\jour Optics and Spectroscopy
\yr 2020
\vol 128
\issue 5
\pages 669
\mathnet{http://mi.mathnet.ru/os1123}
\transl
\jour Optics and Spectroscopy
\yr 2020
\vol 128
\issue 5
\pages 674--677
\crossref{https://doi.org/10.1134/S0030400X20050100}
Linking options:
  • https://www.mathnet.ru/eng/os1123
  • https://www.mathnet.ru/eng/os/v128/i5/p669
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Optics and Spectroscopy Optics and Spectroscopy
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024