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Optics and Spectroscopy, 2020, Volume 128, Issue 5, Page 669 (Mi os1123)  
This article is cited in 1 scientific paper (total in 1 paper)

Optical sensors and transducers

The effect of high background and dead time of an InGaAs/InP single-photon avalanche photodiode on the registration of microsecond range near-infrared luminescence

P. S. Parfenova, A. P. Litvina, D. A. Onishchuka, K. A. Goncharb, K. Berwickc, A. V. Fedorova, A. V. Baranova

a School of Photonics, ITMO University, Saint-Petersburg, Russia
b Department of Physics, Lomonosov Moscow State University, Moscow, Russia
c School of Electrical and Electronic Engineering, Technological University Dublin, Ireland
Full-text PDF (29 kB) Citations (1)
Abstract: The effects of a high background count and a microsecond dead time interval on a gated InGaAs/InP single-photon avalanche photodiode (SPAD) during microsecond luminescence decay registration are discussed. It is shown that the background count rate of the SPAD limits its use for time-resolved and steady-spectral measurements, and that a “pile-up” effect appears in the microsecond range.
Keywords: near-infrared detector; photon counting; single-photon avalanche diode (SPAD), pile-up, counting loss.
Funding agency Grant number
Russian Science Foundation 18-13-00200
This work was supported by the Russian Science Foundation (agreement no. 18-13-00200).
Received: 27.01.2020
Revised: 27.01.2020
Accepted: 06.02.2020
English version:
Optics and Spectroscopy, 2020, Volume 128, Issue 5, Pages 674–677
DOI: https://doi.org/10.1134/S0030400X20050100
Document Type: Article
Language: English
Citation: P. S. Parfenov, A. P. Litvin, D. A. Onishchuk, K. A. Gonchar, K. Berwick, A. V. Fedorov, A. V. Baranov, “The effect of high background and dead time of an InGaAs/InP single-photon avalanche photodiode on the registration of microsecond range near-infrared luminescence”, Optics and Spectroscopy, 128:5 (2020), 669; Optics and Spectroscopy, 128:5 (2020), 674–677
Citation in format AMSBIB
\Bibitem{ParLitOni20}
\by P.~S.~Parfenov, A.~P.~Litvin, D.~A.~Onishchuk, K.~A.~Gonchar, K.~Berwick, A.~V.~Fedorov, A.~V.~Baranov
\paper The effect of high background and dead time of an InGaAs/InP single-photon avalanche photodiode on the registration of microsecond range near-infrared luminescence
\jour Optics and Spectroscopy
\yr 2020
\vol 128
\issue 5
\pages 669
\mathnet{http://mi.mathnet.ru/os1123}
\transl
\jour Optics and Spectroscopy
\yr 2020
\vol 128
\issue 5
\pages 674--677
\crossref{https://doi.org/10.1134/S0030400X20050100}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Optics and Spectroscopy Optics and Spectroscopy
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