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Institute of High Current Electronics, Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia
Address: Russia, 634055, Tomsk, Akademichesky prosp.., 2/3
Phone: +7 (3822) 49 15 44
E-mail:
Website: https://www.hcei.tsc.ru
Number of persons: 192
Number of authors: 266
Number of publications: 292

Personnel: A B C D E F G I K L M N O P R S T V Y Z ß
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Institute of High Current Electronics, Siberian Branch of the Russian Academy of Sciences, Tomsk, RussiaInstitute of High Current Electronics (IHCE), Siberian Branch, Russian Academy of Sciences, was established in 1977. At that time the backbone of the IHCE staff was a team of Tomsk Polytechnic Institute (now Tomsk Polytechnic University), led by Professor Gennady Mesyats (now academician, vice-president of Russian Academy of Sciences). He became a founder and first IHCE director. Upon receiving a proposal and being elected to lead Ural Branch, RAS in 1986, Mesyats left for Ekaterinburg and Academician Sergey Bugaev became the director of IHCE and held this position till his premature death in April 2002. Now Prof. Sergey Korovin, corresponding member of RAS, is on duty of the Institute's head.

Presently, Institute of High Current Electronics is one of the world-recognized leaders in the field of development of high power microwave generators, high current electron and ion accelerators, high power X-ray sources. The world acceptance of IHCE researches conducted can be acknowledged by fruitful cooperation between IHCE labs and partners from USA, UK, France, Germany, Denmark, The Netherlands, etc.




Other institution names:
  • Institute of High Current Electronics, Siberian Branch of the USSR Academy of Sciences
 
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