The catalytic action of vanadium and its oxide (V) in the oxidation processes of A$^{\mathrm{III}}$ B$^{\mathrm{V}}$ semiconductors

The catalytic synchronous mechanism effect of deposited nanoscale layers of chemostimulaters V and V$_2$O$_5$ on the surface of InP and GaAs in the process of thermal oxidation these semiconductors was established. The proof of this mechanism is a abrupt decline in the effective activation energy of processes, a significant increase in the rate of film growth compared with its own oxidation, regeneration of active particles containing V$^{+5}$ (data of XRD, IRS, AES), the independence of the kinetic parameters of oxidation processes on the amount of applied catalyst. Thermal oxidation of InP in the presence of nanoislands of V$_2$O$_5$ in the initial stage of the process occurs mainly in those catalytically active centers (accordingly to the data of SEM, AES).