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Papers, presented at NANO-2015
Facile synthesis of $(\mathrm{CdZn})\mathrm{Se}$ nanocrystalline thin films via arrested precipitation technique (APT) for photovoltaic application
Chaitali. S. Bagade, Vishvnath. B. Ghanwat, Kishorkumar. V. Khot, Pallavi. B. Patil, Rahul. M. Mane, P. N. Bhosale Materials Research Laboratory, Department of Chemistry, Shivaji University, Kolhapur 416004, India
Abstract:
Nanocrystalline $(\mathrm{CdZn})\mathrm{Se}$ thin films have been successfully synthesized via a simple and cost effective arrested precipitation technique. The deposition and synthetic strategy of $(\mathrm{CdZn})\mathrm{Se}$ thin films exert appreciable influence on the photovoltaic properties of solar cells. In this paper, systematic characterizations of optostructural, morphological, compositional and electrochemical properties have been carried out. The optical band gap was evaluated from UV-Vis-NIR spectra at wavelengths ranging from $400$ – $1100$ nm. X-ray diffraction (XRD) pattern reveals that the deposited film was nanocrystalline in nature and exhibited a cubic crystal structure. The dependency of microstructural parameters such as crystallite size has been studied. Scanning electron microscopy (SEM) images demonstrate that surface morphology was uniform, dense, smooth and well adhered to substrate surface. The as-deposited nanorystalline $(\mathrm{CdZn})\mathrm{Se}$ thin film exhibits $0.61$ % conversion efficiency at room temperature.
Keywords:
$(\mathrm{CdZn})\mathrm{Se}$, arrested precipitation technique (APT), thin films, semiconductor material, solar cells.
Received: 02.02.2016 Revised: 11.04.2016
Citation:
Chaitali. S. Bagade, Vishvnath. B. Ghanwat, Kishorkumar. V. Khot, Pallavi. B. Patil, Rahul. M. Mane, P. N. Bhosale, “Facile synthesis of $(\mathrm{CdZn})\mathrm{Se}$ nanocrystalline thin films via arrested precipitation technique (APT) for photovoltaic application”, Nanosystems: Physics, Chemistry, Mathematics, 7:3 (2016), 553–557
Linking options:
https://www.mathnet.ru/eng/nano239 https://www.mathnet.ru/eng/nano/v7/i3/p553
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Abstract page: | 39 | Full-text PDF : | 22 |
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